Available for Import
High-voltage bipolar high-current transistors 2T8143T
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar n-p-n high-power high-voltage switching transistors in metal-ceramic package, intended for operation in high-power key, amplifying devices and other special-purpose equipment
Specifications
Collector-emitter boundary voltage
120 V
Collector-emitter saturation voltage
0.8 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power DMOS Transistors 2P7242A-4
View DetailsPowerful Linear LDMOS Transistor KP9171A
View DetailsBipolar Transistor 1NT251 for Switching Devices I93.456.000TU
View DetailsPower Module AnM200HBB12M for Industrial Applications
View DetailsN-Channel MOSFET Transistor AnR40N20
View DetailsTransistor Optocoupler AOT123A with Local Gold Plating
View DetailsHigh-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View DetailsHigh-Voltage NPN Silicon Switching Transistor KT8155G
View DetailsN-channel MOSFET Transistor AnU12N10L
View DetailsField-effect P-Channel Transistor 2P527A9
View DetailsPowerful GaN-based Microwave Transistor PP9139B1
View DetailsPowerful NPN Amplifying Transistors Special Purpose 2T908A-2
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions