
High-frequency special-purpose field-effect transistors 2P305G/IU
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon planar field-effect transistors with an isolated gate and an integrated n-channel designed for operation in input stages of high frequency amplifiers, in amplifiers with high input impedance, in special-purpose equipment.
Specifications
Cut-off voltage
6 V
Gate leakage current
1.0E-9 A
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