
High-power NPN special-purpose amplifying transistors 2T968A
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon planar n-p-n switching power transistor in glass-metal package, designed for operation in broadband linear amplifiers.
Specifications
Collector reverse current
5.0E-7 A
Collector-emitter reverse current
1.0E-6 A
Emitter reverse current
5.0E-7 A
Static current transfer coefficient
25-35
Boundary voltage
250 V
Collector-emitter saturation voltage
1 V
Limit frequency of the current transfer coefficient
Flat grinder, Specialised grinder
Collector junction capacitance
3.5E-12
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