
High-frequency pulse transistors of special purpose 2T603I/IU OSM
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon epitaxial-planar n-p-n pulse high-frequency transistors in metal-glass case, designed for operation in circuits of special-purpose equipment.
Specifications
Collector reverse current
3.0E-6 A
Emitter reverse current
3.0E-6 A
Collector junction capacitance
1.5E-11
Emitter junction capacitance
4.0E-11
Time constant of the feedback circuit at high frequency
400
Static current transfer coefficient
not less than 20, not more than 210
Collector-emitter saturation voltage
1.2 V
Base - emitter saturation voltage
1.3 V
Resorption time
70
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