High-frequency pulse transistors of special purpose 2T608A/IU

Available for Import

High-frequency pulse transistors of special purpose 2T608A/IU

High-Power Transistors

Manufacturer:

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Transistor 2T117B OSM High-frequency special purpose pulse transistors 2T603B/IU OSM High-frequency special-purpose field-effect transistors 2P305A/IU High-frequency special-purpose field-effect transistors 2P305B/IU Special purpose high-frequency pulse transistors 2T603A/IU

Special purpose high-frequency pulse transistors 2T603A/IU OSM Transistor KT117G (with full gold-plated leg) Transistor 2T117G Transistor KT117G (with local gold-plated leg) Transistor KT117B (with local gold-plated leg) Transistor KT117G (with local gold-plated leg) Special purpose high-frequency pulse transistors 2T603B/IU Transistor KT117B (with local gold-plating) High-frequency special-purpose field-effect transistors 2P305G/IU Special purpose high-frequency pulse transistors 2T603G/IU High-frequency pulse transistors of special purpose 2T603I/IU OSM High-power NPN special-purpose amplifying transistors 2T968A Transistor KT117B (with full gold-plated leg) Transistor KT117A (with local gold-plated leg) Special purpose high frequency pulse transistors 2T608A/IU OSM Transistor 2T117B Transistor 2T117B OSM Special purpose high-frequency pulse transistors 2T608B/IU

Description

Silicon epitaxial-planar n-p-n pulse high-frequency transistors in metal-glass case, designed for operation in circuits of special-purpose equipment.

Specifications

Collector reverse current 1.0E-5 A

Emitter reverse current 1.0E-5 A

High frequency current transfer coefficient module at least 25, not more than 80

Collector junction capacitance 1.5E-11

Emitter junction capacitance 5.0E-11

Static current transfer coefficient at least 25, not more than 80

Collector-emitter saturation voltage 1 V

Base-emitter saturation voltage 2 V

Resorption time 100

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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