High-frequency special-purpose field-effect transistors 2P305B/IU

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FOB, CIF & EXW terms available

Key Highlights

  • Made in Russia - engineered for durability
  • Suitable for challenging environments
  • Lower cost of ownership than European alternatives
  • Bulk orders available with volume discounts
  • Documentation and customs clearance assistance provided

Description

Silicon planar field-effect transistors with an isolated gate and an integrated n-channel designed for operation in input stages of high frequency amplifiers, in amplifiers with high input impedance, in special-purpose equipment.

Specifications

Gate-source voltage
0.5 V
Cut-off voltage
6 V
Gate leakage current
1.0E-9 A
Noise figure
6.5
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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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