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Special purpose high-frequency pulse transistors 2T603A/IU OSM
Manufacturer:
NPP Iskra OJSC
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Available Models
Silicon Planar Transistor 2T117V OSH for Electronic Devices
High-frequency special purpose pulse transistors 2T603B/IU OSM
High-frequency pulse transistors of special purpose 2T608A/IU
High-frequency special-purpose field-effect transistors 2P305A/IU
High-frequency special-purpose field-effect transistors 2P305B/IU
Description
Silicon epitaxial-planar n-p-n pulse high-frequency transistors in metal-glass case, designed for operation in circuits of special-purpose equipment.
Specifications
Collector reverse current
3.0E-6 A
Emitter reverse current
3.0E-6 A
Collector junction capacitance
1.5E-11
Emitter junction capacitance
4.0E-11
Time constant of the feedback circuit at high frequency
400
Static current transfer coefficient
at least 20, not more than 80
Collector-emitter saturation voltage
0.8 V
Base - emitter saturation voltage
1.5 V
Resorption time
70
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