Available for Import
Power IGBT module AnM200RCB17H
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon IGBT module AnM200RCB17H
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
200 A
Configuration type
Top level key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful high-voltage field-effect transistor KP829A
View Details
CMOS N-channel transistor An10N70S10
View Details
CMOS N-channel transistor AnB12N20
View Details
High-power field-effect switching transistors for special purpose 2?7152?
View Details
Transistor 2T368A/PK
View Details
High-voltage bipolar high-current transistors 2T8143F1
View Details
Powerful microwave transistor on the basis of gallium nitride PP9139B1
View Details
Power IGBT module AnM150HBEB12M
View Details
Transistor KT3187B9
View Details
Transistor KT879A
View Details
CMOS P-channel transistor AnP53P03
View Details
Power keys K3003KI014A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions