Available for Import
High-Power Special Purpose Field Effect Transistors 2P7152A for Electronics
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon high-current n-channel field-effect transistors in ceramic-metal insulated package, intended for use in radio-electronic equipment.
Specifications
Initial drain current
5.0E-6 A
Gate leakage current
1.0E-7 A
Drain-to-source resistance in open state
0.012 ohm
Threshold voltage gate - source
2...4 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View Details
High-Power GaN Microwave Transistor PP9138B
View Details
Powerful NPN Amplifying Transistors Special Purpose 2T908A-2
View Details
High Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View Details
Non-Hermetic Transistors and Diodes AnR30IGB065D
View Details
High-Power High-Voltage Field Transistor KP829A
View Details
High Voltage Bipolar Power Transistor 2T8144VM1
View Details
Transistor Optocoupler Special Purpose 3OT123A9 OSM
View Details
Power Module MTKI-2000-25 for Industrial Applications
View Details
N-Channel MOSFET Transistor AnR40N20
View Details
Power Module AnS150FRD065 for Industrial Applications
View Details
High Voltage Powerful N-Channel DMOS Transistor KP7154BS
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions