Available for ImportHigh-Power Special Purpose Field Effect Transistors 2P7152A for Electronics
Manufacturer:NPP Iskra OJSC
Price:Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon high-current n-channel field-effect transistors in ceramic-metal insulated package, intended for use in radio-electronic equipment.
Specifications
Initial drain current
5.0E-6 A
Gate leakage current
1.0E-7 A
Drain-to-source resistance in open state
0.012 ohm
Threshold voltage gate - source
2...4 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Wave Running Light "Lotoshnik
View DetailsPowerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View DetailsHigh-Power NPN Transistors for Special Applications 2T968A-5
View DetailsHigh-Power GaN Microwave Transistor PP9138B
View DetailsCompact NPN Bipolar Transistor KT665A9 for Surface Mount
View DetailsPower IGBT Module AnM450HBE065M for Efficient Switching
View DetailsHigh-Frequency p-n-p Transistor 2T3108A/PK
View DetailsTransistor Optocoupler Special Purpose 3OT123A9 OSM
View DetailsP-N-P Silicon Transistor KT234V9
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8121B2
View DetailsPowerful High-Voltage Field Transistor KP829B
View DetailsPowerful N-Channel DMOP Transistors 2P7246A91
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions