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Power IGBT module AnM200LCB12M Available for Import

Power IGBT module AnM200LCB12M

High-Power Transistors
Manufacturer:
Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Key Highlights

  • Made in Russia - engineered for durability
  • Suitable for challenging environments
  • Lower cost of ownership than European alternatives
  • Bulk orders available with volume discounts
  • Documentation and customs clearance assistance provided

Available Models

Power IGBT module AnM150HBEB12M Power IGBT module AnM150RCB12M Power IGBT module AnM300HBBB065M Power IGBT module AnM300LCB12H Power IGBT module AnM150HBB17M

Description

Silicon IGBT module AnM200LCB12M

Specifications

Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
200 A
Configuration type
Lower level key
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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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