Available for Import

Power IGBT module AnM200HBEBB065M

High-Power Transistors

Manufacturer:

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Power IGBT module AnM150HBEB12M Power IGBT module AnM200LCB12M Power IGBT module AnM150RCB12M Power IGBT module AnM300HBBB065M Power IGBT module AnM300LCB12H

Power IGBT module AnM150HBB17M Power IGBT module AnM200HBB12M Power IGBT module AnM200RCB12H Power IGBT module AnM300HBEB12M Power IGBT module AnM150HBEB12M Power IGBT module AnM400LCB12M Power IGBT module AnM300RCB12H Power IGBT module AnM200RCB17M Power IGBT module AnM200RCB17H

Description

Silicon IGBT module AnM200HBBEB065M

Specifications

Housing type

mpk-62

Type of acceptance

Maximum allowable voltage

650 V

Maximum permissible current

200 A

Recovery time

200

Configuration type

half-bridge

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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