Available for Import
High-Power IGBT Module AnM150HBEВ12M for Energy Management Applications
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM150HBEB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
150 A
Recovery time
200
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Power IGBT Module AnM200RCB065M
View DetailsSilicon Epitaxial-Planar Microwave Transistor KT6131A
View DetailsPowerful GaN-based Microwave Transistor PP9170A
View DetailsHigh-Frequency Pulse Transistor 2T606A for Specialized Applications
View DetailsPowerful Linear LDMOS Transistor KP9171BS
View DetailsSilicon Epitaxial Planar p-n-p Transistor 2T3129B9/PK
View DetailsSpecialized Thyristor Optocouplers 3OU186A
View DetailsSilicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View DetailsPowerful NPN Amplifying Transistors Special Purpose 2T908A-2
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8121B2
View DetailsHigh-Voltage Bipolar Power Transistors 2T8143F1
View DetailsHigh-Power Special Purpose Field Effect Transistors 2P7152A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions