High-power NPN special-purpose switching transistors 2T878A

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FOB, CIF & EXW terms available

Key Highlights

  • Made in Russia - engineered for durability
  • Suitable for challenging environments
  • Lower cost of ownership than European alternatives
  • Bulk orders available with volume discounts
  • Documentation and customs clearance assistance provided

Description

Silicon planar-epitaxial n-p-n high-power switching high-voltage transistors in a metal-glass case designed for use in switching circuits, pulse modulators, secondary power supplies and other special-purpose equipment

Specifications

Collector reverse current 0.003 A
Emitter reverse current 0.04 A
Static current transfer coefficient in the common emitter circuit 12-50
Boundary voltage 400 V
Collector-emitter saturation voltage 1.5 V
Base-emitter saturation voltage 2 V
Decline time 0.5
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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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