
High-power NPN special-purpose switching transistors 2T878B
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
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Description
Silicon planar-epitaxial n-p-n high-power switching high-voltage transistors in a metal-glass case designed for use in switching circuits, pulse modulators, secondary power supplies and other special-purpose equipment
Specifications
Collector reverse current
0.003 A
Emitter reverse current
0.04 A
Static current transfer coefficient in the common emitter circuit
12-50
Boundary voltage
300 V
Collector-emitter saturation voltage
1.5 V
Base-emitter saturation voltage
2 V
Decline time
0.3
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