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High-voltage bipolar high-current transistors 2T8144VM
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
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Description
Silicon planar n-p-n high power high voltage switching transistors.
Specifications
Collector-emitter boundary voltage
450 V
Collector-base voltage
1000 V
Collector-emitter saturation voltage
1.5 V
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