Available for Import
Powerful GaN-based Microwave Transistor PP9170D for Amplification Applications
Manufacturer:
NIIET OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Powerful microwave transistor based on gallium nitride for use in amplifier stages, L-, S- and C-band frequencies. Due to the small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.
Specifications
Transistor weight
1 year
Frequency
4
Output power
100 W
Maximum voltage
150 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power NPN Switching Transistor 2T867A for Special Applications
View Details
Power IGBT Module AnM100RCA065M
View Details
High-Power Special Purpose Field Effect Transistors 2P7152A
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829B
View Details
Dual N-Channel Power MOSFET Transistor MIK8205
View Details
Field-effect P-Channel Transistor 2P527A9
View Details
Silicon N-P-N Switching Transistor KT908A
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View Details
Transistor Optocoupler AOT123A with Local Gold Plating
View Details
Special Purpose Transistor Optocoupler 3OT127A
View Details
Miniature Silicon Epitaxial-Planar n-p-n Transistor 2T368A9/PC
View Details
Power IGBT Module AnM450HBE065M for Efficient Switching
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions