Available for Import
Insulated gate bipolar transistor (IGB) AnR6IGB17D
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Isolated gate bipolar transistor (IGB) AnR6IGB17D
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
6 A
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