Available for Import
Insulated gate bipolar transistor IGB AnR6IGB17D
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Isolated gate bipolar transistor (IGB) AnR6IGB17D
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
6 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power GaN Microwave Transistor PP9138A
View DetailsLDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View DetailsHigh-Voltage Bipolar Power Transistors 2T8143F1
View DetailsHigh-Power DMOS Transistors 2P7242A-4
View DetailsHigh-Power GaN Microwave Transistor PP9138B
View DetailsHigh-Power High-Voltage Field Transistor KP829D
View DetailsPower Keys K1376KI014 - High Performance Switches
View DetailsPower Module MTKI-2000-25 for Industrial Applications
View DetailsTransistor Optocoupler AOT123A with Local Gold Plating
View DetailsPowerful Linear LDMOS Transistor KP9171A
View DetailsPowerful GaN-based Microwave Transistor PP9170G
View DetailsWave Running Light "Lotoshnik
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions