Available for Import
Insulated gate bipolar transistor IGB AnR6IGB17D
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Isolated gate bipolar transistor (IGB) AnR6IGB17D
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
6 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power DMOS Transistors 2P7246A-5
View Details
High Voltage N-P-N Silicon Planar Switching Transistor KT8190V
View Details
High-Power GaN Microwave Transistors PП9136A
View Details
Powerful GaN-Based Microwave Transistor PP9170V
View Details
Power Module AnM200HBB12M for Industrial Applications
View Details
Field-effect P-Channel Transistor 2P527A9
View Details
High-Voltage Bipolar Power Transistors 2T8143F1
View Details
High-Voltage NPN Silicon Switching Transistor KT8155G
View Details
High Voltage N-Channel DMOS Transistor KP7154BS
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View Details
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
Power Wrenches K3003KI014
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions