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Insulated gate bipolar transistor (IGB) AnR15IGB12D Available for Import

Insulated gate bipolar transistor (IGB) AnR15IGB12D

High-Power Transistors
Manufacturer:
Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Key Highlights

  • Made in Russia - engineered for durability
  • Suitable for challenging environments
  • Lower cost of ownership than European alternatives
  • Bulk orders available with volume discounts
  • Documentation and customs clearance assistance provided

Available Models

CMOS N-channel transistor AnR40N20 Insulated Gate Bipolar Transistor (IGB) AnR25IGB12D CMOS N-channel transistor AnR9N65 CMOS N-channel transistor AnR37N03 Transistors without diode in non-hermetic package AnR25IGB12

Description

Isolated gate bipolar transistor (IGBT) AnR15IGB12D

Specifications

Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
15 A
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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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