Available for Import
Insulated gate bipolar transistor IGB AnR15IGB12D
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Isolated gate bipolar transistor (IGBT) AnR15IGB12D
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
15 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Voltage NPN Silicon Switching Transistor KT8155G
View DetailsPowerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsSpecial Purpose Transistor Optocouplers 3ОТ123Г ОСМ
View DetailsSpecial Purpose Thyristor Optocouplers 3OU186B
View DetailsPower IGBT Module AnM200RCB065M
View DetailsN-channel MOSFET Transistor AnU12N10L
View DetailsHigh-Power High-Voltage Field Transistor KP829D
View DetailsPowerful GaN-Based Microwave Transistor PP9170V
View DetailsSpecialized Thyristor Optocouplers 3OU186A
View DetailsHigh-Power GaN Microwave Transistor PP9138A
View DetailsWave Running Light "Lotoshnik
View DetailsCompact N-Channel Field Transistor 2P526A9
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions