CMOS N-channel transistor AnR37N03

Available for Import

CMOS N-channel transistor AnR37N03

High-Power Transistors

Manufacturer:

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

CMOS N-channel transistor AnR40N20 Insulated Gate Bipolar Transistor (IGB) AnR25IGB12D CMOS N-channel transistor AnR9N65 Transistors without diode in non-hermetic package AnR25IGB12 IGBT transistor AnR30IGB17

CMOS N-channel transistor AnR55N06 Insulated gate bipolar transistor (IGB) AnR6IGB17D CMOS P-channel transistor AnR26P10L CMOS P-channel transistor AnR26P10 CMOS N-channel transistor AnR9N70 DMOS N-channel transistor AnR35N20 Insulated gate bipolar transistor (IGB) AnR15IGB12D

Description

DMOS N-channel transistor AnR37N03

Specifications

Housing type

TO-247 (KT-43V)

Type of acceptance

QA

Maximum allowable voltage

30 V

Maximum permissible current

37 A

Drain-to-source resistance in open state

0.005 ohm

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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