Available for ImportHigh Voltage Bipolar Power Transistors 2T8144BM1 for Efficient Switching Applications
Manufacturer:NPP Iskra OJSC
Price:Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon planar n-p-n high power high voltage switching transistors.
Specifications
Collector-emitter boundary voltage
450 V
Collector-base voltage
600 V
Collector-emitter saturation voltage
1.2 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power DMOS Transistors 2P7242A-4
View DetailsHigh-Frequency Pulse Transistor 2T606A for Specialized Applications
View DetailsHigh-Frequency p-n-p Transistor 2T3108A/PK
View DetailsHigh-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View DetailsPower Module AnM200SSP25M for Industrial Applications
View DetailsPowerful GaN Microwave Transistor for Amplification PP9137A
View DetailsN-Channel MOSFET Transistor AnB3N120 for Efficient Switching
View DetailsPowerful GaN-based Microwave Transistor PP9170G
View DetailsTransistor Optocoupler Special Purpose 3OT123A9 OSM
View DetailsLow-Noise GaAs Planar Field Transistor AП379A9
View DetailsHigh Voltage Field Transistor KP829A9
View DetailsHigh-Power GaN Microwave Transistors PП9136A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions