Available for ImportHigh Voltage Bipolar Power Transistors 2T8144BM1 for Efficient Switching Applications
Manufacturer:NPP Iskra OJSC
Price:Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon planar n-p-n high power high voltage switching transistors.
Specifications
Collector-emitter boundary voltage
450 V
Collector-base voltage
600 V
Collector-emitter saturation voltage
1.2 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power High-Voltage Field Transistor KP829Zh
View DetailsHigh-Power Special Purpose Field Effect Transistors 2P7152A
View DetailsN-Channel MOSFET Transistor AnS140N06
View DetailsP-N-P Silicon Transistor KT234V9
View DetailsSpecialized Thyristor Optocouplers 3OU186A
View DetailsHigh-Power DMOS Transistors 2P7242A-4
View DetailsSpecial Purpose Transistor Optocoupler 3OT127A
View DetailsN-Channel MOSFET Transistor AnD1N70
View DetailsPowerful NPN Switching Transistors for Special Applications 2T856G
View DetailsN-Channel MOSFET Transistor AnR40N20
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
View DetailsPowerful IGBT Module AnM450HBE12M for Efficient Energy Control
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions