
Transistors without diode in non-hermetic package AnR25IGB12
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Diode-less transistors in non-hermetic package AnR25IGB12
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
30 A
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