Available for Import
Insulated Gate Bipolar Transistor IGB AnR25IGB12D
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Isolated gate bipolar transistor (IGB) AnR25IGB12D
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
25 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
N-Channel MOSFET Transistor AnD1N70
View DetailsDMOП P-Channel Transistor AnP53P03
View DetailsHigh Voltage N-P-N Switching Transistor KT8144A
View DetailsN-Channel MOSFET Transistor AnB12N20
View DetailsP-N-P Silicon Transistor KT234V9
View DetailsSilicon Planar Transistor 2T117V OSH for Electronic Devices
View DetailsPowerful High-Voltage Field Transistor KP829B
View DetailsPowerful GaN Microwave Transistor for Amplification PP9137A
View DetailsHigh Voltage N-Channel DMOS Transistor KP7154BS
View DetailsLow-Noise GaAs Planar Field Transistor AП379A9
View DetailsWave Running Light "Lotoshnik
View DetailsPowerful N-Channel DMOP Transistors 2P7246A91
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions