Available for Import
Insulated Gate Bipolar Transistor IGB AnR25IGB12D
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Isolated gate bipolar transistor (IGB) AnR25IGB12D
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
25 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
P-N-P Silicon Transistor KT234V9
View DetailsHigh Voltage N-P-N Switching Transistor KT8144A
View DetailsHigh Voltage Bipolar Power Transistor 2T8144VM1
View DetailsWave Running Light "Lotoshnik
View DetailsPowerful NPN Switching Transistors for Special Applications 2T856G
View DetailsPowerful GaN-based Microwave Transistor PP9170A
View DetailsHigh-Power GaN Microwave Transistor PP9138A
View DetailsHigh-Frequency Pulse Transistor 2T606A for Specialized Applications
View DetailsSilicon N-P-N Switching Transistor KT908A
View DetailsPower Module AnM200HBB12M for Industrial Applications
View DetailsPowerful GaN-based Microwave Transistor PP9170G
View DetailsHigh-Power High-Voltage Field Transistor KP829A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions