Available for Import
Insulated Gate Bipolar Transistor (IGB) AnR25IGB12D
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Isolated gate bipolar transistor (IGB) AnR25IGB12D
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
25 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Power module MTKI-2000-25
View Details
Bipolar transistor 1NT251 ?93.456.000?? (by U80.073.212GCh)
View Details
CMOS N-channel transistor AnR40N20
View Details
Transistors and diodes in non-hermetic packages AnS75IGB065D
View Details
Silicon planar N-P-N high-power high-voltage switching transistor of KT8190B type
View Details
Power keys K1376KI014
View Details
High-power NPN special-purpose amplifying transistors 2T908A-2
View Details
AnM450HBE065M Power IGBT Module
View Details
High-power high-voltage field-effect transistor KP829J
View Details
Power IGBT module AnM75LCA12M
View Details
AnM100HBA12M power module
View Details
Powerful microwave transistor on the basis of gallium nitride PP9137A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions