
High-frequency pulse transistors of special purpose 2T608B/IU OSM
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon epitaxial-planar n-p-n pulse high-frequency transistors in metal-glass case, designed for operation in circuits of special-purpose equipment.
Specifications
Collector reverse current
1.0E-5 A
Emitter reverse current
1.0E-5 A
Collector junction capacitance
1.5E-11
Emitter junction capacitance
5.0E-11
Static current transfer coefficient
Not less than 50, not more than 160
Collector-emitter saturation voltage
1 V
Base-emitter saturation voltage
2 V
Resorption time
100
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