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High-frequency pulse transistors of special purpose 2T603B/IU OSM Available for Import

High-frequency pulse transistors of special purpose 2T603B/IU OSM

High-Power Transistors
Manufacturer:
Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Key Highlights

  • Made in Russia - engineered for durability
  • Suitable for challenging environments
  • Lower cost of ownership than European alternatives
  • Bulk orders available with volume discounts
  • Documentation and customs clearance assistance provided

Available Models

Special purpose high frequency pulse transistors 2T603B/IU Transistor KT117B (with full gold-plated leg) High-frequency special-purpose field-effect transistors 2?305B/IU Transistor KT117A (with full gold-plated leg) Transistor 2T117G OSM

Description

Silicon epitaxial-planar n-p-n pulse high-frequency transistors in metal-glass case, designed for operation in circuits of special-purpose equipment.

Specifications

Collector reverse current 3.0E-6 A
Emitter reverse current 3.0E-6 A
Collector junction capacitance 1.5E-11
Emitter junction capacitance 4.0E-11
Time constant of the feedback circuit at high frequency 400
Static current transfer coefficient at least 20, not more than 80
Collector-emitter saturation voltage 0.8 V
Base - emitter saturation voltage 1.5 V
Resorption time 70
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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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