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High-frequency special-purpose field-effect transistors 2?305B/IU
Manufacturer:
NPP Iskra OJSC
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Description
Silicon planar field-effect transistors with an isolated gate and an integrated n-channel designed for operation in input stages of high frequency amplifiers, in amplifiers with high input impedance, in special-purpose equipment.
Specifications
Gate-source voltage
0.2...2 V
Cut-off voltage
6 V
Gate leakage current
1.0E-12 A
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