Available for Import

High-frequency special-purpose field-effect transistors 2?305B/IU

High-Power Transistors

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Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Special purpose high frequency pulse transistors 2T603B/IU Transistor KT117B (with full gold-plated leg) High-frequency pulse transistors of special purpose 2T603B/IU OSM Transistor KT117A (with full gold-plated leg) Transistor 2T117G OSM

Special purpose high-frequency pulse transistors 2T603I/IU Transistor KT117G (with full gold-plated leg) High-frequency pulse transistors of special purpose 2T603G/IU OSM Transistor 2T117B High-frequency pulse transistors of special purpose 2T608B/IU OSM Transistor 2T117A OSM Transistor 2T117A

Description

Silicon planar field-effect transistors with an isolated gate and an integrated n-channel designed for operation in input stages of high frequency amplifiers, in amplifiers with high input impedance, in special-purpose equipment.

Specifications

Gate-source voltage

0.2...2 V

Cut-off voltage

6 V

Gate leakage current

1.0E-12 A

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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