Available for Import
High-Power GaN Microwave Transistor PP9138B for Amplifier Applications
Manufacturer:
NIIET OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Powerful microwave transistor on the basis of gallium nitride for application in amplifying stages, L-, S- and C-band frequencies. Due to the small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.
Specifications
EFFICIENCY
SBVVBG %
Output power
25 W
Maximum voltage
130 V
Transistor weight
1 year
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High Voltage Bipolar Power Transistors 2T8144BM1
View Details
High-Power Special Purpose Field Effect Transistors 2P7152A
View Details
Transistor Optocoupler AOT110B with Local Gold-Plated Pins
View Details
Silicon N-P-N Switching Transistor KT908A
View Details
Power Module AnS150FRD065 for Industrial Applications
View Details
Power Module MTKI-2000-25 for Industrial Applications
View Details
Powerful Linear LDMOS Transistor KP9171A
View Details
High-Power GaN Microwave Transistors PП9136A
View Details
Compact NPN Bipolar Transistor KT665A9 for Surface Mount
View Details
Powerful GaN-Based Microwave Transistor PP9170B
View Details
High-Voltage Bipolar Power Transistors 2T8143F1
View Details
High-Power High-Voltage Field Transistor KP829D
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions