High-frequency pulse transistors of special purpose 2T603G/IU OSM

Available for Import

High-frequency pulse transistors of special purpose 2T603G/IU OSM

High-Power Transistors

Manufacturer:

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Special purpose high frequency pulse transistors 2T603B/IU Transistor KT117B (with full gold-plated leg) High-frequency pulse transistors of special purpose 2T603B/IU OSM High-frequency special-purpose field-effect transistors 2?305B/IU Transistor KT117A (with full gold-plated leg)

Transistor 2T117G OSM Special purpose high-frequency pulse transistors 2T603I/IU Transistor KT117G (with full gold-plated leg) Transistor 2T117B High-frequency pulse transistors of special purpose 2T608B/IU OSM Transistor 2T117A OSM Transistor 2T117A

Description

Silicon epitaxial-planar n-p-n pulse high-frequency transistors in metal-glass case, designed for operation in circuits of special-purpose equipment.

Specifications

Collector reverse current 3.0E-6 A

Emitter reverse current 3.0E-6 A

Collector junction capacitance 1.5E-11

Emitter junction capacitance 4.0E-11

Time constant of the feedback circuit at high frequency 400

Static current transfer coefficient Not less than 60, not more than 180

Collector-emitter saturation voltage 0.8 V

Base - emitter saturation voltage 1.5 V

Resorption time 70

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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