Available for Import

Silicon high voltage high power channel DMOS transistors and modules 2P829J9

High-Power Transistors

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Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Silicon high voltage high power channel DMOS transistors and modules 2P829B9 Silicon high voltage high power channel DMOS transistors and modules 2P829E9 Silicon high voltage high power channel DMOS transistors and modules 2P829D9

Description

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Specifications

Initial drain current 0.0005 A

Gate leakage current 1.0E-7 A

Drain-to-source resistance in open state 0.003 ohm

Threshold voltage 2...4 V

Switch-on delay time 80

Rise time 80

Shutdown delay time One link up to 16GB 64-bit DDR4-2400 MHz with ECC support; 16GB (for CPC1309-01); 8GB (for CPC1309-02)

Decline time 60

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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