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Silicon high voltage high power channel DMOS

High-Power Transistors

Manufacturer: NPP Iskra OJSC

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

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Available Models

High Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9 Silicon high voltage high power channel DMOS transistors and modules 2P829E9 Silicon high voltage high power channel DMOS transistors and modules 2P829D9

Description

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Specifications

Initial drain current

0.0005 A

Gate leakage current

1.0E-7 A

Drain-to-source resistance in open state

0.003 ohm

Threshold voltage

2...4 V

Switch-on delay time

Rise time

Shutdown delay time

One link up to 16GB 64-bit DDR4-2400 MHz with ECC support; 16GB (for CPC1309-01); 8GB (for CPC1309-02)

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Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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Silicon high voltage high power channel DMOS

Available Models

Description

Specifications

Share your requirements for a quick response!