Available for Import

Silicon high voltage high power channel DMOS transistors and modules 2P829E9

High-Power Transistors

Manufacturer:

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Email Inquiry

Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Silicon high voltage high power channel DMOS transistors and modules 2P829B9 Silicon high voltage high power channel DMOS transistors and modules 2P829D9 Silicon high voltage high power channel DMOS transistors and modules 2P829J9

Description

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Specifications

Gate leakage current

1.0E-7 A

Threshold voltage

2...4 V

Switch-on delay time

Rise time

125

Shutdown delay time

160

Decline time

Save Your Time

Share your requirements for a quick response!

Looking for

Quantity

Your mobile

Instant response in 15 minutes

Best wholesale prices guaranteed

Direct from manufacturer

Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

Categories