Available for Import
High-frequency special-purpose field-effect
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon planar field-effect transistors with a diffused gate and a
n-channel, designed for operation in special-purpose equipment.
n-channel, designed for operation in special-purpose equipment.
Specifications
Initial drain current
0.033 A
Cut-off voltage
10 V
Gate leakage current
1.0E-8 A
Reverse current of gate-to-drain p-n junction
1.0E-6 A
Drain-to-source resistance in open state
100 ohm
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Field-effect P-Channel Transistor 2P527A9
View Details
Powerful NPN Transistor 2T808A for Special Applications
View Details
High-Power IGBT Module AnM150HBEВ12M
View Details
High Voltage Powerful N-Channel DMOS Transistor KP7154BS
View Details
N-Channel MOSFET Transistor AnS140N06
View Details
Powerful High-Voltage N-P-N Switching Transistor KT8143F
View Details
Powerful High-Voltage Field Transistor KP829B
View Details
High-Power High-Voltage Field Transistor KP829Zh
View Details
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
Wave Running Light "Lotoshnik
View Details
Powerful GaN-based Microwave Transistor PP9170G
View Details
High-Power High-Voltage Field Transistor KP829A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions