High-frequency special-purpose field-effect transistors 2P302A/IU

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FOB, CIF & EXW terms available

Key Highlights

  • Made in Russia - engineered for durability
  • Suitable for challenging environments
  • Lower cost of ownership than European alternatives
  • Bulk orders available with volume discounts
  • Documentation and customs clearance assistance provided

Description

Silicon planar field-effect transistors with a diffused gate and a
n-channel, designed for operation in special-purpose equipment.

Specifications

Steepness of characteristic
5 mA/V
Initial drain current
0.003...0.024 A
Cut-off voltage
5 V
Gate leakage current
1.0E-8 A
Reverse current of gate-to-drain p-n junction
1.0E-6 A
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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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