Available for Import

High-frequency special-purpose field-effect transistors 2?302B/IU

High-Power Transistors

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Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Special purpose thyristor optocouplers 3OU186A High-frequency special-purpose field-effect transistors 2P302A/IU High-frequency special-purpose field-effect transistors 2?302B/IU Special purpose thyristor optocouples 3OU186B

Description

Silicon planar field-effect transistors with a diffused gate and a
n-channel, designed for operation in special-purpose equipment.

Specifications

Steepness of characteristic

7 mA/V

Initial drain current

0.018...0.043 A

Cut-off voltage

7 V

Gate leakage current

1.0E-8 A

Reverse current of gate-to-drain p-n junction

1.0E-6 A

Drain-to-source resistance in open state

150 ohm

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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