VACUUM UNIT FOR PLASMA CHEMICAL VAPOUR DEPOSITION OF LAYERS FROM GAS PHASE WITH ICP SOURCE AND SLUICE LOADING FROM CASSETTE TO C

Processing of plates in one technological cycle:
60x48 mm - 19 pcs, Ø 76 mm - 13 pcs, Ø 100 mm - 7 pcs,
Ø 150 mm - 3 pieces, Ø 200 mm - 1 piece, Ø 300 mm - 1 piece;
Sluice chamber for loading - unloading of substrates on the carrier
from cassette to cassette;
Transport system for transferring the substrates on the carrier from the airlock chamber to the
working chamber on the basis of manipulator;
Working gases: SiH?, N?O, O?, N?, He and others;
The deposition rate of SiO? layers is not less than 0.5 nm/s;
Table heating up to 350°C;
Consumption power not more than 21 kW;
Oil-free pumping system;
Possibility to build in a clean room.