VACUUM UNIT FOR PLASMA CHEMICAL ETCHING OF LAYERS WITH ICP SOURCE PLASMA TM 9

Group or individual wafer processing in one technological cycle: 60x48 mm - 3 pcs; Ø 76, 100, 150 - 1 pc;
HF electrode with substrate cooling;
Etching speeds 0.5 - 1.5 µm/min;
Measurement of RF displacement on RF electrode of substrate holder from 0 to 1000V;
Regulation and automatic maintenance of RF ICP plasma source power level in the range of 400-600 W;
Consumption power not more than 7 kW;
Working gases: O?, SF?, C?F?, CHF? and others;
Oil-free pumping system;
Possibility to be built into the clean room.