Vacuum unit for reactive-ion layer etching with sluice loading PLASMA TM 7

Working surface of the table-HF electrode Ø 150 mm; Sluice chamber for loading - unloading of wafers Ø 75, 100, 150 mm from cassette to cassette; Transport system for substrates transfer from the lock chamber to the working chamber on the basis of manipulator; Measurement of RF displacement on RF electrode - substrate holder from 0 to 1000 V; Regulation and automatic maintenance of the RF electrode - substrate holder power level in the range of 30-200 W; Working gases: Ar, SF6, O2, CF4; Forvacuum pumping system; Microprocessor control system; Consumption power not more than 3 kW; Area occupied by one unit ~ 2,5 m2.