Available for Import
Transistors without diode in non-hermetic case AnB15IGB12
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Transistors without diode in non-hermetic package AnB15IGB12
Specifications
Housing type
TO-263 (KT-90)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
15 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View DetailsHigh-Power IGBT Module AnM150HBEВ12M
View DetailsHigh-Frequency p-n-p Transistor 2T3108A/PK
View DetailsCompact NPN Bipolar Transistor KT665A9 for Surface Mount
View DetailsHigh-Power GaN Microwave Transistor PP9138A
View DetailsTransistor Optocoupler Special Purpose 3OT123A9 OSM
View DetailsHigh Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9
View DetailsPowerful NPN Switching Transistor 2T808A-2 for Special Applications
View DetailsPowerful GaN-based Microwave Transistor PP9170G
View DetailsNon-Hermetic Transistors and Diodes AnR30IGB065D
View DetailsSilicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View DetailsDual N-Channel Power MOSFET Transistor MIK8205
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions