
DMOS N-channel transistor AnB26N10L
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
DMOS N-channel transistor AnB26N10L
Specifications
Housing type
TO-263 (KT-90)
Type of acceptance
QA
Maximum allowable voltage
100 V
Maximum permissible current
26 A
Drain-to-source resistance in open state
0.04 ohm
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