
Transistor 2T313B/PC
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon epitaxial-planar high-frequency p-n-p transistors 2T313B/PC are made in metal-glass case KT-1 and are intended for operation in special-purpose equipment.
Specifications
Boundary voltage
5 V
Static current transfer coefficient
80...300
Collector junction capacitance
B1/B8 2100/900 MHz
Current transfer coefficient modulus at high frequency
2
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