Available for Import
Transistor 2T313BPC
Manufacturer:
ARSENAL KRZPP OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar high-frequency p-n-p transistors 2T313B/PC are made in metal-glass case KT-1 and are intended for operation in special-purpose equipment.
Specifications
Boundary voltage
5 V
Static current transfer coefficient
80...300
Collector junction capacitance
B1/B8 2100/900 MHz
Current transfer coefficient modulus at high frequency
2
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
AnDM400SC12M Power Module
View DetailsPower Keys K1376KI014 - High Performance Switches
View DetailsPowerful IGBT Module AnM450HBE12M for Efficient Energy Control
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View DetailsTransistor Optocoupler AOT110B with Local Gold-Plated Pins
View DetailsDMOП P-Channel Transistor AnP53P03
View DetailsPowerful GaN-based Microwave Transistor PP9170G
View DetailsPowerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View DetailsWave Running Light "Lotoshnik
View DetailsMiniature Silicon Epitaxial-Planar n-p-n Transistor 2T368A9/PC
View DetailsHigh-Power High-Voltage Field Transistor KP829A
View DetailsHigh Voltage N-Channel DMOS Transistor KP7154BS
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions