Available for Import
Transistor 2T313APK
Manufacturer:
ARSENAL KRZPP OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar high-frequency p-n-p transistors 2T313A/PC are made in metal-glass case KT-1 and are intended for operation in special purpose equipment.
Specifications
Boundary voltage
5 V
Static current transfer coefficient
30...120
Collector junction capacitance
B1/B8 2100/900 MHz
Current transfer coefficient modulus at high frequency
2
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Transistor Optocoupler AOT123A with Local Gold Plating
View DetailsPower Module AnS150FRD065 for Industrial Applications
View DetailsHigh-Power GaN Microwave Transistors PП9136A
View DetailsHigh Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9
View DetailsSilicon Epitaxial Planar p-n-p Transistor 2T3129B9/PK
View DetailsNon-Hermetic Transistors and Diodes AnR30IGB065D
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A
View DetailsPower IGBT Module AnM200RCB065M
View DetailsHigh Voltage N-Channel DMOS Transistor KP7154BS
View DetailsHigh-Power High-Voltage Field Transistor KP829Zh
View DetailsN-Channel MOSFET Transistor AnB3N120 for Efficient Switching
View DetailsSilicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions