Available for Import
Transistor 2T3129G9PK
Manufacturer:
ARSENAL KRZPP OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar p-n-p transistors 2T3129G9/PC are made in miniature plastic case KT-46 and are designed for operation in amplifiers, generators, voltage stabilisers, pulse devices of special-purpose equipment.
Specifications
Boundary voltage
20 V
Static current transfer coefficient
200...500
Collector junction capacitance
125
Current transfer coefficient modulus at high frequency
2
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Silicon Epitaxial-Planar Transistor for Radio Engineering KT3187B9
View DetailsPower Module AnM200HBB12M for Industrial Applications
View DetailsTransistor Optocoupler AOT110B with Local Gold-Plated Pins
View DetailsHigh Voltage Bipolar Power Transistors 2T8144BM1
View DetailsTransistor Optocoupler AOT123A with Local Gold Plating
View DetailsSpecial Purpose Transistor Optocoupler 3OT123B9 OSH
View DetailsNon-Hermetic Transistors and Diodes AnR30IGB065D
View DetailsHigh-Power NPN Transistors for Special Applications 2T968A-5
View DetailsHigh-Power GaN Microwave Transistor PP9138A
View DetailsHigh-Power Special Purpose Field Effect Transistors 2P7152A
View DetailsPowerful GaN-based Microwave Transistor PP9170D
View DetailsHigh-Power IGBT Module AnM150HBEВ12M
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions