
Transistor 2T3129D9/PK
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon epitaxial-planar p-n-p transistors 2T3129D9/PK are made in miniature plastic case KT-46 and are designed for operation in amplifiers, generators, voltage stabilisers, pulse devices of special-purpose equipment.
Specifications
Boundary voltage
15 V
Static current transfer coefficient
200...500
Collector junction capacitance
125
Current transfer coefficient modulus at high frequency
2
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