Available for Import
Power IGBT module AnM75HBA12M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM75HBA12M
Specifications
Housing type
mpk-34
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
75 A
Recovery time
180
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful GaN-Based Microwave Transistor PP9170B
View DetailsHigh Voltage N-Channel DMOS Transistor KP7154BS
View DetailsPower Module AnDM200EA12M - Efficient Energy Control
View DetailsPower Switches K3003KI014A
View DetailsHigh Voltage Field Transistor KP829A9
View DetailsPowerful Linear LDMOS Transistor KP9171BS
View DetailsAnDM150CD12M Power Module for Enhanced Performance
View DetailsSpecial Purpose Transistor Optocoupler 3OT127A
View DetailsPowerful NPN Switching Transistors for Special Applications 2T856G
View DetailsPowerful IGBT Module AnM450HBE12M for Efficient Energy Control
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View DetailsHigh-Frequency Field Transistors for Special Applications 2P301B/IU
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions