Available for Import
Power IGBT module AnM100HBA12M
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM100HBA12M
Specifications
Housing type
mpk-34
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
100 A
Recovery time
200
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829B
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
View DetailsDual N-Channel Power MOSFET Transistor MIK8205
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8121B2
View DetailsPower IGBT Module AnM75LCA12M
View DetailsPowerful NPN Switching Transistors for Special Applications 2T856G
View DetailsP-N-P Silicon Transistor KT234V9
View DetailsPowerful GaN-based Microwave Transistor PP9170D
View DetailsPower Wrenches K3003KI014
View DetailsPowerful Linear LDMOS Transistor KP9171BS
View DetailsPower IGBT Module AnM100RCA065M
View DetailsHigh Voltage Field Transistor KP829A9
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions