Available for Import
Power IGBT module AnM100RCA12M
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon IGBT module AnM100RCA12M
Specifications
Housing type
mpk-34
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
100 A
Recovery time
200
Configuration type
Top level key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-voltage bipolar high-current transistors 2T8144BM1
View Details
AnDM200EA12M power module
View Details
AnS150FRD065 power module
View Details
Power IGBT module AnM200RCB065M
View Details
High-power field-effect switching transistors for special purpose 2?7152?
View Details
Silicon high voltage high power channel DMOS transistors and modules 2P829G
View Details
AnM200SSP25M power module
View Details
CMOS P-channel transistor AnP53P03
View Details
Special purpose transistor optocouples 3OT123A9 OSM
View Details
AnDM100AD17M power module
View Details
Power IGBT module AnM100RCA065M
View Details
High-power high-voltage field-effect transistor KP829D
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions