Insulated gate bipolar transistor (IGB) AnS75IGB12D

Available for Import

Insulated gate bipolar transistor (IGB) AnS75IGB12D

High-Power Transistors

Manufacturer:

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

CMOS N-channel transistor AnS140N06 Insulated Gate Bipolar Transistor (IGB) AnS100IGB12D AnSA75FRD12 power module AnSA75FRD17 power module Transistors without diode in non-hermetic package AnS50IGB17

AnSP75FRD12 power module CMOS N-channel transistor AnS120N10 AnSA150FRD065 power module Transistors and diodes in non-hermetic packages AnS50IGB17D

Description

Isolated gate bipolar transistor (IGB) AnS75IGB12D

Specifications

Housing type

SOT-227 (MPK-30)

Type of acceptance

QA

Maximum allowable voltage

1200 V

Maximum permissible current

75 A

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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