Available for Import
Insulated Gate Bipolar Transistor (IGB) AnS100IGB12D
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Isolated gate bipolar transistor (IGB) AnS100IGB12D
Specifications
Housing type
SOT-227 (MPK-30)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
100 A
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