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Transistors without diode in non-hermetic package AnS50IGB17 Available for Import

Transistors without diode in non-hermetic package AnS50IGB17

High-Power Transistors
Manufacturer:
Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Key Highlights

  • Made in Russia - engineered for durability
  • Suitable for challenging environments
  • Lower cost of ownership than European alternatives
  • Bulk orders available with volume discounts
  • Documentation and customs clearance assistance provided

Available Models

CMOS N-channel transistor AnS140N06 Insulated Gate Bipolar Transistor (IGB) AnS100IGB12D AnSA75FRD12 power module AnSA75FRD17 power module AnSP75FRD12 power module

Description

Diode-less transistors in non-hermetic package AnS50IGB17

Specifications

Housing type
SOT-227 (MPK-30)
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
SBVVBG A
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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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