Available for Import
Insulated Gate Bipolar Transistor (IGB) AnR40IGB06D
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Isolated gate bipolar transistor (IGB) AnR40IGB06D
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
600 V
Maximum permissible current
40 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power DMOS Transistors 2P7246A-5
View DetailsCompact NPN Bipolar Transistor KT665A9 for Surface Mount
View DetailsHigh Voltage Bipolar Power Transistor 2T8144VM1
View DetailsNon-Hermetic Package Transistors and Diodes AnS75IGB065D
View DetailsP-N-P Silicon Transistor KT234V9
View DetailsCompact N-Channel Field Transistor 2P526A9
View DetailsPower Module MTKI-2000-25 for Industrial Applications
View DetailsSilicon Epitaxial-Planar Transistor for Radio Engineering KT3187B9
View DetailsHigh Voltage N-P-N Switching Transistor KT8144A
View DetailsHigh-Power NPN Switching Transistor 2T867A for Special Applications
View DetailsHigh Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View DetailsHigh Voltage N-Channel DMOS Transistor KP7154BS
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions