Transistors without diode in non-hermetic package AnR75IGB12

Available for Import

Transistors without diode in non-hermetic package

High-Power Transistors

Manufacturer: ANGSTREM OJSC

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Available Models

Non-Hermetic Transistors and Diodes AnR30IGB065D CMOS N-channel transistor AnR27N20 CMOS N-channel transistor AnR16N60 CMOS N-channel transistor AnR16N50 CMOS N-channel transistor AnR7N120

CMOS N-channel transistor AnR12N60 Insulated gate bipolar transistor (IGB) AnR50IGB12 CMOS N-channel transistor AnR22N50 CMOS N-channel transistor AnR11N80 Insulated Gate Bipolar Transistor (IGB) AnR40IGB06D CMOS P-channel transistor AnR17P20L CMOS N-channel transistor AnR14N60 Transistors without diode in non-hermetic package AnR20IGB17 Transistors and diodes in non-hermetic package AnR30IGB12D CMOS P-channel transistor AnR17P20 Insulated gate bipolar transistor (IGB) AnR50IGB17 CMOS N-channel transistor AnR24N40 CMOS N-channel transistor AnR14N50 Transistors without diode in non-hermetic package AnR75IGB065 Transistors without diode in non-hermetic package AnR80IGB12 CMOS N-channel transistor AnR10N70 Insulated Gate Bipolar Transistor (IGB) AnR40IGB12D CMOS N-channel transistor AnR6N80 CMOS N-channel transistor AnR7N80 Transistors and diodes in non-hermetic package AnR20IGB17D

Description

Diode-less transistors in non-hermetic package AnR75IGB12

Specifications

Housing type

TO-247 (KT-43V)

Type of acceptance

QA

Maximum allowable voltage

1200 V

Maximum permissible current

75 A

Save Your Time

Share your requirements for a quick response!

Looking for

Quantity

Your mobile

Instant response in 15 minutes

Best wholesale prices guaranteed

Direct from manufacturer

Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

Similar Products You May Be Interested In

Powerful GaN Microwave Transistor for Amplification PP9137A

Powerful GaN Microwave Transistor for Amplification PP9137A

Silicon Epitaxial-Planar N-P-N Transistor 2T368A/PK

Silicon Epitaxial-Planar N-P-N Transistor 2T368A/PK

High-Power GaN Microwave Transistor PP9138B

High-Power GaN Microwave Transistor PP9138B

High-Frequency Impulse Transistors for Special Applications 2T603B/IU

High-Frequency Impulse Transistors for Special Applications 2T603B/IU

Powerful Linear LDMOS Transistor KP9171BS

Powerful Linear LDMOS Transistor KP9171BS

N-Channel MOSFET Transistor AnS140N06

N-Channel MOSFET Transistor AnS140N06

Continuous Mode DMOS RF Transistor P - 2P979B, 230MHz

Continuous Mode DMOS RF Transistor P - 2P979B, 230MHz

Powerful NPN Switching Transistors for Special Applications 2T856G

Powerful NPN Switching Transistors for Special Applications 2T856G

High-Power Special Purpose Field Effect Transistors 2P7152A

High-Power Special Purpose Field Effect Transistors 2P7152A

Powerful GaN-based Microwave Transistor PP9170D

Powerful GaN-based Microwave Transistor PP9170D

High-Voltage NPN Silicon Switching Transistor KT8155G

High-Voltage NPN Silicon Switching Transistor KT8155G

Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A

Powerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A

Verified Suppliers

All products are sourced directly from authorized Russian manufacturers

Quality Assurance

Products meet international quality standards with proper certification

Global Shipping

Reliable logistics solutions to deliver products to your location

Secure Payments

Multiple secure payment options to facilitate international transactions

Your callback request has been received. We'll contact you shortly.