Available for Import
Insulated Gate Bipolar Transistor (IGB) AnR40IGB12D
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Isolated gate bipolar transistor (IGTB) AnR40IGB12D
Specifications
Housing type
TO-247 (KT-43V)
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
40 A
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Power Module AnS150FRD065 for Industrial Applications
View DetailsPower Switches K3003KI014A
View DetailsAnDM400SC12M Power Module
View DetailsLDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View DetailsWave Running Light "Lotoshnik
View DetailsN-channel MOSFET Transistor AnU12N10L
View DetailsHigh-Power Special Purpose Field Effect Transistors 2P7152A
View DetailsPowerful GaN Microwave Transistor for Amplification PP9137A
View DetailsPower IGBT Module AnM450HBE065M for Efficient Switching
View DetailsDual N-Channel Power MOSFET Transistor MIK8205
View DetailsHigh-Power DMOS Transistors 2P7242A-4
View DetailsHigh-Power High-Voltage Field Transistor KP829D
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions